Dr. Ahmed G. Abo-Khalil

Electrical Engineering Department

Error-correcting m

DRAM memory may provide increased protection against soft errors by relying on error correcting codes. Such error-correcting memory, known as ECC or EDAC-protected memory, is particularly desirable for high fault-tolerant applications, such as servers, as well as deep-space applications due to increased radiation.

Error-correcting memory controllers traditionally use Hamming codes, although some use triple modular redundancy.

Interleaving allows distributing the effect of a single cosmic ray potentially upsetting multiple physically neighboring bits across multiple words by associating neighboring bits to different words. As long as a single event upset (SEU) does not exceed the error threshold (e.g., a single error) in any particular word between accesses, it can be corrected (e.g., by a single-bit error correcting code), and the illusion of an error-free memory system may be maintained.

Office Hours

Monday 10 -2

Tuesday 10-12

Thursday 11-1

My Timetable

Contacts


email: a.abokhalil@mu.edu.sa

a_galal@yahoo.com

Phone: 2570

Welcome

Welcome To Faculty of Engineering

Almajmaah University

IEEE

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Photovoltaic Operation


Wave Power

World's Simplest Electric Train



PeltierModule-JouleThief-Fridge

homemade Aircondition

Salt water battery


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