Biography
Prof. Dr. Abdul Majid Ex- Chairman, Department of Physics Ex- Director, High-Tech Centralized Instrumentation Laboratory HTCIL University of Azad Jammu and Kashmir UAJK Chehla Campus, Muzaffarabad-13100 Pakistan. |
Research Interest & Objectives |
Fabrication and Characterization of Nano-Structures Materials and Devices
Characterization of MOCVD Grown III-V Semiconductors Materials |
Birth Date & Place |
April 25, 1961, Wah Cantt (district Rawalpindi, Pakistan) |
Education |
2009 Post-Doctorate: Nanotechanology, Department of Electronic Materials Engineering (EME), Research School of Physical Sciences and Engineering (RSPhysSE), Australian National University (ANU),Canberra ACT-0200, Australia Title: Experimental Study of Quantum Structured Optoelectronic Devices: Intermediate Band Solar Cells Supervisor: Professor Chennupati Jagadish ( Federation Fellow). 2006 Ph. D., Physics (Semiconductors Physics), Department of Physics, Quaid-i-Azam University, Islamabad, Pakistan Title: Study of Deep Levels Associated with some Heavy Transition-Metals in MOCVD GaAs. Supervisor: Dr. M. Zafar Iqbal (Meritorious Professor). 1986 M. Sc., Physics, University of Peshawar, Peshawar, Pakistan. 1983 B. Sc., (Physics and Math-A & -B), University of Punjab, Lahore. Pakistan. 1979 Higher Secondary School Certificate, (F. G. College for boys, Wah Cantt, Pakistan) F.B.I.S.E., Islamabad. 1977 Secondary School Certificate, (F. G. Model High School No. 6, Wah Cantt, Pakistan), B.I.S.E., Sargodha. |
High-Tech Instrumentation Trainings:
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Jul. 09-16, 2011 Scanning Electron Microscope: Jeol JSM-6510LV/JSM-6610LV, One week Training at Jeol Instruments Ltd. Tokyo, Japan Mar. 10-13, 2011 Sputter coater: Jeol JFC-1600 Jun 15-20, 2010 Fourier Transform Infrared Spectrometer: Perkin Elmer Spectrum 100 with ATR May 23-26 2010 UV-Visb-IR Spectrometer: Perkin Elmer Lambda-950 |
Extra Qualifications |
Computer Courses: Oct. 1989 - Jan. 1990, FORTRAN-77, Computer Centre, Azad Jammu and Kashmir University (AJ&KU), Muzaffarabad, Pakistan. Technical Courses: Oct. 1983 to May 1984, Electrician Course, Allama Iqbal Open University, Islamabad, Pakistan. Oct. 1982 to May 1983, Electrical Wiring, Allama Iqbal Open University, Islamabad, Pakistan. Jun. 1977 to Jan. 1978, Photography, London Institute of Photography (Pvt), Karachi, Pakistan.
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Experience |
Full-time Faculty Member of Physics Department, University of Azad Jammu and Kashmir, Muzaffarabad, Pakistan
May 30, 2007 – Conti… Professor (BPS-21) Jun 24, 2008 – Mar. 26, 2009 Visiting Fellow (Academic) at Australian National University Canberra, Australia. (Post Doctoral Fellowship awarded by Higher Education Commission (HEC) of Pakistan, Feb. 10, 2007 - May 29, 2007 Professor (BPS-20) Aug. 12, 2004 – Feb. 09 2007 Associate Professor Feb. 12, 1994 – Aug. 11, 2004 Assistant Professor Sep. 21, 1987 – Feb. 11, 1994 Lecturer
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Extra-ResponsibilitiesUniversity of Azad Jammu and Kashmir, Muzaffarabad, Pakistan
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Jan. 01, 2010– Cont. Chairman, Department of Physics, University of AJ&K Oct. 01, 2009 – Cont. Director, High-tech centralized instrumental Lab. Oct. 31, 2006 – Jun 24, 2008 Additional Controller of Examinations Oct. 31, 2006 – Cont. Additional Controller of Examinations, University Aug. 15, 2005 – Cont. Member, University Affiliation Committee Aug. 01, 2005 – Cont. Chairman, University Technical Committee: Equipment Aug. 08, 2004 Chairman, University (AJ&K) Web Site Developer
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RESEARCH ACTIVITIES
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Projects/Reports: 2010-2011 AJ&K University research support project - Fabrication and Characterisation of Porous Silicon. (In progress) 2010-2011 HEC project maintenance of Scientific equipments (Scanning electron microscope: Jeol JSM-6510LV) (Done final report submitted). 2008-2009 Post Doctoral Research Report on Experimental Study of Quantum Structured Optoelectronic Devices: Intermediate Band Solar Cells, Submitted in partial fulfilment of requirement of postdoctoral fellowship of Higher Education Commission (HEC) of Pakistan/Australian National University (ANU) Department of Electronic Materials Engineering (EME), Research School of Physical Sciences and Engineering (RSPhysSE), Canberra ACT-0200,Australia 1995-1996 University/ U.G.C. Project - Characterisation of some Technologically important Materials in Thin Films form (done and facilitated the two M.Sc. research projects). 1999-2005 Commission of European Communities project No. CI1-CT93-0076. A partially supported for Collaborative Study on Transition Metal Doped III-Vs Compound Semiconductors (Done as research project of Ph.D.) xxxx HEC Infrastructure Facilities project: Provision of Liquid Nitrogen Plant: A Basic Infrastructure for Experimental Sciences “Cryogenics, Key to Advanced Science and Technology” (submitted via UAJK).
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Supervision of Research Students:
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Ph.D. Research Thesis: 2011 Muhammad Athair (enrolled), Optical Properties of Quantum Structured Semiconductor Materials for Solar Cells. M. Phil. Research Thesis: 2011 Muhammad Iftekhar, (in progress) n-ZnO/p-Si Based junction Diode and its Characteristics 2011 Nasar Ahmed (in progress), Fabrication and Characterization Zn/ZnO Core/Shell System 2011 Muhammad Rashid Khan(in progress), Catalyst Assisted Growth and Characterization of ZnO Nano-Structures 2011 Shakeela Bibi (in progress), Dark Current Analysis of Quantum Dot Intermediate Band Solar Cell 2011 Zudia Aziz (in progress), Study of Nanoporous Anodic Aluminium Oxide M.Sc. Student's Reports: 2011 Atif Bashir, Synthesis and Characterization of Metal doped ZnO nano particles. 2011 Jan Muhammad, Study of size dependent parameters on Synthesis of Copper doped ZnO nano particles 2009 Mohammad Habib Yasin and Mohammad Asif Latif, Effect of Etching Parameters on Porosity of Fabricated Porous Silicon. 2009 Ghazala Razaq, Raqia Khatoon and Mizrah Tariq, Optical properties of thermally annealed chlorine doped Zn0.2Cd0.8S. 2008 M. Rashid Khan, Raja Kurram Shazad and Wajid Taj, Fabrication of Porous p-type Silicon. 2007 Muhammad Yousaf, Energy Band Structure of Carbon Nanotubes using Atomistix Virtual Nano Lab. 2007 Saeed-ul Hassan Gilani, Fabrication of porous on n-Type Silicon. 2007 Ishtiaq Ahmed and Naeem Akhtar, Study of Organic Light Emitting Diode. 2007 Darakhshanda Jabeen, Study of Fabrication of porous on p-Type Silicon. 2006 Habib-ur-Rehman, Study the Formation Porous Silicon. 2006 Khalid Mehmood, Fabrication & Characterization of Carbon Nanotubes. 2006 Zulqar-Nain Habib, Fabrication and Characterization of Metal Nanotubes. 2006 Mohsin Rafique, Study and numerical calculation of electronic structure of Si. 2006 Tariq Aziz, Study of electronic structure of GaAs with the help of Density Function Theory. 1996 Akhtar Hussain and M. Abdul Rauf Khan, Optical Properties of Chlorine Doped Zn0.9Cd0.1S Thin Films. 1992 Akram-ul-Haq, Optical Properties of ZnxCd1-xS Thin Films Evaporated by Electron Bombardment. 1990 Nigahat G. M. and Fauzia Tayyiab, Temperature Dependent Electrical Conductivity of Doped Germanium. 1990 Ajaz Hassan Raza, Temperature Dependent Hall Effect of Doped Germanium. 1989 Abdul Hamid Khan, Measurement of Lattice Parameters of Potassium Bromide by X-Ray Diffraction. 1989 Muhammad Rafique, Study of Lattice Parameters of Sodium Chloride. 1989 Najam-ul Hassan, Determination of Lattice Parameters of Potassium Iodide by X-Ray Diffraction.
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Research Publications |
2011 Muhammad Rafique, Matiullah, Saeed Ur Rahman, Said Rahman, Muhammad Ikram Shahzad, Bushra Azam, Ishfaq Ahmed, Abdul Majid & Muhammad Iqbal Siddique -Assessment of indoor radon doses received by the dwellers of Balakot – NWFP, Pakistan: a pilot study, Carpathian Journal of Earth and Environmental Sciences, 6, 133-140. 2010 A. Majid, C. Jagadish, L. Fu and H. Tan, MOCVD grown Quantum Dot-in-a-Well Solar Cells, Key Engineering Materials, 442, p-398-403, Trans Tech Publications, Switzerland. 2009 Nazir A. Naz, Umar S. Quarashi, A. Majid and M. Zafar Iqbal, Ruthenium related deep-level defects in n-type GaAs, Physica B, 404, 4956. 2008 M. Zafar Iqbal, A. Majid, Nazir A. Naz and Umar S. Qurashi, 4d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition, J. Appl. Phys., 104, 113708. 2008 L. Fu, A. Majid, G. Jolley, S. Mokkopati, H. H. Tan, and C. Jagadish, Application of self-assembled quantum dots for optoelectronic devices, Australia Japan Nanophotonics Workshop ANU, Canberra, December 09-10. 2008 Khizar-ul-Haq, M. A. Khan, U.S.Qurashi and Abdul Majid, Interaction of alpha radiation with iron doped n-type silicon, Microelectronics Journal 39, 797. 2007 Nazir A. Naz, Umar S. Qurashi, Abdul Majid, M. Zafar Iqbal, Doubly-charged state of EL2 defect in MOCVD grown Gas, Physica B, 401, 250. 2007 Suleman Khan, Naseer Ahmed, Akhlaq Ahmad Khan Amanullah Khan and A. Majid,Lie Group Analysis of a linear Nonholonomic Dynamical System, Sci. Int. 19, 83. 2007 Abdul Majid, Efficient Low Level Signal Measuring Instrument Lock-In Amplifier, Sci. Echo, 15 July. 2006 M. Zafar Iqbal, A. Majid, A. Dadgar and D. Bimberg, Electric-field-enhanced thermal emission from osmium-related deep level in n-GaAs, Advances in Science and Technology Vol. 46 pp. 73, Trans Tech Publications, Switzerland. 2005 A. Majid, M. Zafar Iqbal, A. Dadgar and D. Bimberg, Osmium Related Deep Levels in MOCVD Grown GaAs, J. Appl. Phys., 98, 083709. 2005 M. Zafar Iqbal, A. Majid, A. Dadgar and D. Bimberg, Deep Levels in Osmium Doped p-type GaAs Grown by Metal-organic Chemical Vapor Deposition, 27th International Conference on the Physics of Semiconductors,, Arizona, USA. AIP Conf. Proc. 772, 147. 2005 A. Majid, M. Zafar Iqbal, A. Dadgar and D. Bimberg, Deep Levels in Ruthenium Doped p-type MOCVD GaAs, 27th International Conference on the Physics of Semiconductors, Arizona, AIP Conf. Proc. 772, 143. 2003 A. Majid, M. Zafar Iqbal, A. Dadgar and D. Bimberg, Deep Levels in Rhodium-Doped p-type MOCVD GaAs, Physica B, 340, 362. 2003 M. Zafar Iqbal, A. Majid, A. Dadgar and D. Bimberg, Osmium Related Deep Levels in n-type GaAs, Physica B, 340, 358. 2003 A. Majid, M. Zafar Iqbal, Shah Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. Bimberg., Characteristics of Deep Levels Associated with Rhodium Impurity in type GaAs, J. Appl. Phys., 94, 3115. 2001 M. Zafar Iqbal, A. Majid, Shah Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. Bimberg., Rhodium Related Deep Levels in n-type MOCVD GaAs., Physica B,308, p816-819. 1999 M. Zafar Iqbal, U. S. Qurashi, A. Majid, Aurangzab Khan, Nasim Zafar, A. Dadgar and D. Bimberg., Deep Levels Associated with Alpha Irradiation of n-type MOCVD InP, Physica B, 273, 839. 1997 A. Majid, A. Hussain and M. A. R. Khan, Determination of Optical Constant and Thickness of Zn0.9Cd0.1S Thin Films, Kashmir Res. J. N. Sci., Vol 1 (1), 27. 1997 A. Majid and G. A Khan, A Proposed Automated Computerized Hall Profiling System for Characterization of Semiconductor Materials, Kashmir Res. J. N. Sci., Vol 1 (2), 87. xxxx Abdul Majid, Effect of lambda correct electric field on emission rates of osmium related deep level in n-type Gas (submitted to J. Appl. Phys.). 2010 L. Fu, R. Lekhwar, H. F. Lu, A. Majid, G. Jolley, H. H. Tan and C. Jagadish, Study of strain compensation effect on quantum dot solar cells, IEEE, Electron Device Vol.xx, p-xxxx. - Submitted xxxx A.Majid, C. Jagadish, L. Fu. and H. Tan, Luminescence behaviour of MOCVDgrown 10 layers Quantum Dot and quantum Well in GaAs, (to be submitted in Physica Status Solidi - Rapid Research Letters)
xxxx A.Majid, L. Fu. H. Tan and C. Jagadish, Comparison of MOCVD grown AlGaAs and InGaAs Dot-in-a-Well Intermediate Band Solar Cells, (manuscript in process for Applied Physics Letters) |
Conference Presentations |
Nov. 07-11, 2010 Fu, L. Jolley, G. Lu, H.F. Majid, A. Tan, H.H. Jagadish, C., Temperature effect on device characteristics of InGaAs/GaAs quantum dot solar cell, 23rd Annual Meeting of the IEEE Photonics Society, 2010, Denver, CO,. Dec. 14-16, 2009 Fu, L. Jolley, G. Mokkapati, S. Majid, A. Lu, H.F. Tan, H.H. Jagadish, C. III–V quantum dots for optoelectronic device applications,International Conference on Computers and Devices for Communication, 2009 (CODEC 2009). Kolkata Print ISBN: 978-1-4244-5073-2 INSPEC Accession Number: 11136798, Date of Current Version: 05 February 2010. Dec. 09–11, 2009 L. Fu, G. Jolley, A. Majid, S. Mokkapti, H. H. Tan, and C. Jagadish,Application of self-assembled quantum dots for optoelectronic devices, International Conference on Advanced Nanomaterials and Nanotechnology (ICANN-2009) Guwahati, Assam (India),. Jun. 26-31, 2002 A. Majid, M. Zafar Iqbal, Akbar and Ali, A Hole Emitting Metastable Defect in n-type GaAs, presented at 27th International Nathiagali Summer College; Nathiagali, NWFP, Pakistan. Jun. 26-31, 2002. A. Majid, M. Zafar Iqbal, Akbar and Ali Extended Defect of Rhodium in MOCVD Grown n-GaAs, presented at 27th International Nathiagali Summer College; Nathiagali, NWFP, Pakistan. Jul. 02- 08, 2001 A. Majid, M. Zafar Iqbal and Akbar Ali, Investigation of Rhodium Related Deep Levels in MOCVD Grown n-GaAs, presented at 26thInternational Nathiagali Summer College; Nathiagali, NWFP, Pakistan. Nov. 20-22, 2000. A. Majid, S. H. Khan, M. Zafar Iqbal and Akbar Ali, Deep Level Transient Spectroscopy of Rhodium Doped n-GaAs, presented at 8th National Symposium on “Frontiers in Physics”, Govt. College University, Lahore.
Nov. 20-22, 2000 S. H. Khan, A. Majid, M. Zafar Iqbal and Akbar Ali, Field Effect on Thermal Electron Emission from Rhodium in n-GaAs, presented at 8th National Symposium on “Frontiers in Physics”, Govt. College University, Lahore. |
Computer Experience |
Application Programmes Microsoft Windows, Origin, Sigma Plot, Microsoft Excel, Microsoft Word, Microsoft Power Point, Corel Draw, Adobe PhotoShop, Home suite, Netscape composer etc. |
Membership of Scientific and Technical Societies |
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