Dr. Ahmed G. Abo-Khalil

Electrical Engineering Department

Ferroelectric RAM

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory. FeRAM advantages over flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase cycles. Disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations, and higher cost.

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Tuesday 10-12

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My Timetable


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email: [email protected]

[email protected]

Phone: 2570

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Almajmaah University


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ستقام اختبارات الميدتيرم يوم الثلاثاء 26-6-1440

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