Title : Steady state simulation of semiconductor optical amplifier


A wideband steady-state model and efficient numerical algorithm for a bulk InP–InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier will be described. The model is will be applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain will be clarified. Simulations and comparisons with experiment will be given in order to demonstrate the versatility of the model.

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